600V 29A N-Channel MOSFET TO-247AC 125mR Rds(on) Product overview: SIHG30N60E-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 29A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 29A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG30N60E-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 933791-SIHG30N60E-E3
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 29A (Tc) 250W (Tc) Through Hole TO-247AC
Package: Tube
Package: TO-247-3
Mounting: Through Hole
Family Name: SIHG30
Categories: Discrete Semiconductor Products
Case / Package: TO-247AC
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Quantity per package: 500
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
MOSFET 600V Vds 30V Vgs TO-247AC
MOSFET N-CH 600V 29A TO247AC
MOSFET N-CH 600V 29A TO247AC
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SIHG30N60E-E3 | 933791-SIHG30N60E-E3 | SIHG30N60E-E3 | 880-SIHG30N60E-E3 | SIHG30N60E-E3 |
| Product Name | N-Channel 600V 29A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG30N60E-E3 | MOSFET | MOSFET N-CH 600V 29A TO247AC | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | |||
| PD | 250000 milliwatts | 250000 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | TO-247; SOT3; TO-247AC | TO-247; TO-247-3 |
