Vishay Intertechnology, Inc. N-Channel 28A 650V 0.117ohm MOSFET Transistor SIHG28N65EF-GE3

Power Field-Effect Transistor, 28A I(D), 650V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Product overview: SIHG28N65EF-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 28A, 650V, 0.117ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 28A, 650V, 0.117ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG28N65EF-GE3 can be used for catalog matching and distributor lookup.

N-Channel 650V 28A (Tc) 250W (Tc) Through Hole TO-247AC

Manufacturer: Vishay Siliconix
Win Source Part Number: 810234-SIHG28N65EF-GE3
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650V
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 250W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 117mOhm at 14A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 146nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 3249pF at 100V
Current - Continuous Drain (Id) at 25°C: 28A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Maximum Vgs: ±30V