Manufacturer: Vishay Siliconix
Win Source Part Number: 810234-SIHG28N65EF-G
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650V
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 250W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 117mOhm at 14A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 146nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 3249pF at 100V
Current - Continuous Drain (Id) at 25°C: 28A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Maximum Vgs: ±30V
N-Channel 650V 28A (Tc) 250W (Tc) Through Hole TO-247AC
MOSFET 650V Vds 30V Vgs TO-247AC
MOSFET N-CH 650V 28A TO247AC
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 810234-SIHG28N65EF-GE3 | SIHG28N65EF-GE3-ND | SIHG28N65EF-GE3 | SIHG28N65EF-GE3 |
| Product Name | FETs - Single - SIHG28N65EF-GE3 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |
