Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHG25N60EFL-GE3

Description
N-Channel 600V 25A (Tc) 250W (Tc) Through Hole TO-247AC
Request a Quote Datasheet
Description
N-Channel 600V 25A (Tc) 250W (Tc) Through Hole TO-247AC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SIHG25N60EFL-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHG25N60EFL-GE3-ND
Single FETs, MOSFETs SIHG25N60EFL-GE3-ND
N-Channel 600V 25A (Tc) 250W (Tc) Through Hole TO-247AC

N-Channel 600V 25A (Tc) 250W (Tc) Through Hole TO-247AC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277752-SIHG25N60EFL-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277752-SIHG25N60EFL-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277752-SIHG25N60EFL-GE3
Win Source Part Number: 1277752-SIHG25N60EFL -GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: E Package: Tube Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 146mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 250W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2274 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 78 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHG25 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1277752-SIHG25N60EFL-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: E
Package: Tube
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 146mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2274 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 78 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHG25
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Singapore, Singapore
MOSFET Transistor
278-SIHG25N60EFL-GE3
MOSFET Transistor 278-SIHG25N60EFL-GE3
Power Field-Effect Transistor, Product overview: SIHG25N60EFL-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG25N60EFL-GE3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: SIHG25N60EFL-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG25N60EFL-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 600V, 25A, To-247Ac Rohs Compliant Vishay - 26AK5797 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 25A, To-247Ac Rohs Compliant Vishay
26AK5797
Mosfet, N-Ch, 600V, 25A, To-247Ac Rohs Compliant Vishay 26AK5797
MOSFET, N-CH, 600V, 25A, TO-247AC ROHS COMPLIANT: YES

MOSFET, N-CH, 600V, 25A, TO-247AC ROHS COMPLIANT: YES

Supplier's Site
MOSFET 600V Vds 30V Vgs TO-247AC

MOSFET 600V Vds 30V Vgs TO-247AC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHG25N60EFL-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHG25N60EFL-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHG25N60EFL-GE3
MOSFET N-CH 600V 25A TO247AC

MOSFET N-CH 600V 25A TO247AC

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SIHG25N60EFL-GE3-ND 1277752-SIHG25N60EFL-GE3 278-SIHG25N60EFL-GE3 26AK5797 SIHG25N60EFL-GE3 SIHG25N60EFL-GE3
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Transistor Mosfet, N-Ch, 600V, 25A, To-247Ac Rohs Compliant Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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