Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIHG25N40D-GE3

Description
Win Source Part Number: 1277896-SIHG25N40D-G E3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 400 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 278W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1707 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 48 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHG25 Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1277896-SIHG25N40D-G E3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 400 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 278W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1707 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 48 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHG25 Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277896-SIHG25N40D-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277896-SIHG25N40D-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277896-SIHG25N40D-GE3
Win Source Part Number: 1277896-SIHG25N40D-G E3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 400 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 278W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1707 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 48 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHG25 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1277896-SIHG25N40D-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 400 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 278W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1707 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 48 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHG25
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - SIHG25N40D-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHG25N40D-GE3-ND
Single FETs, MOSFETs SIHG25N40D-GE3-ND
N-Channel 400V 25A (Tc) 278W (Tc) Through Hole TO-247AC

N-Channel 400V 25A (Tc) 278W (Tc) Through Hole TO-247AC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHG25N40D-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHG25N40D-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHG25N40D-GE3
MOSFET N-CH 400V 25A TO247AC

MOSFET N-CH 400V 25A TO247AC

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 400V Vds 30V Vgs TO-247AC

MOSFET 400V Vds 30V Vgs TO-247AC

Buy Now Datasheet
Mosfet Transistor, N Channel, 25 A, 400 V, 0.14 Ohm, 10 V, 3 V Rohs Compliant Vishay - 62W0516 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 25 A, 400 V, 0.14 Ohm, 10 V, 3 V Rohs Compliant Vishay
62W0516
Mosfet Transistor, N Channel, 25 A, 400 V, 0.14 Ohm, 10 V, 3 V Rohs Compliant Vishay 62W0516
MOSFET Transistor, N Channel, 25 A, 400 V, 0.14 ohm, 10 V, 3 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 25 A, 400 V, 0.14 ohm, 10 V, 3 V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1277896-SIHG25N40D-GE3 SIHG25N40D-GE3-ND SIHG25N40D-GE3 SIHG25N40D-GE3 62W0516
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet Transistor, N Channel, 25 A, 400 V, 0.14 Ohm, 10 V, 3 V Rohs Compliant Vishay
Polarity N-Channel N-Channel N-Channel
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