Manufacturer: Vishay
Win Source Part Number: 064638-SIHG22N60E-GE
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 227W (Tc)
Family Name: SiHG22N60E
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AC
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 21A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 86nC @ 10V
Max Input Capacitance: 1920pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 180 mOhm @ 11A, 10V
Alternative Parts (Cross-Reference): STW23NM60N; R6020ENZ; STW23NM60ND; R6520ENZ1C9;
Introduction Date: September 26, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
600V 21A N-Channel MOSFET TO-247AC Product overview: SIHG22N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 21A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 21A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG22N60E-GE3 can be used for catalog matching and distributor lookup.
N-Channel 600V 21A (Tc) 227W (Tc) Through Hole TO-247AC
MOSFET N-CH 600V 21A TO247AC
MOSFET 600V Vds 30V Vgs TO-247AC
MOSFET N-CH 600V 21A TO247AC
MOSFET, N-CH, 600V, 21A, TO-247AC; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:21A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 064638-SIHG22N60E-GE3 | 278-SIHG22N60E-GE3 | SIHG22N60E-GE3-ND | SIHG22N60E-GE3 | SIHG22N60E-GE3 | SIHG22N60E-GE3 | 19X1938 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG22N60E-GE3 | N-Channel 600V 21A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 21A, To-247Ac; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 600 volts | 600 volts | |||||
| PD | 227000 milliwatts | 227000 milliwatts | 227000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
