Manufacturer: Vishay Siliconix
Win Source Part Number: 794397-SIHG22N60E-E3
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Family Name: SiHG22N60E
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-247AC
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 86nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1920pF @ 100V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 227W (Tc)
Rds On (Maximum) @ Id, Vgs: 180 mOhm @ 11A, 10V
Alternative Parts (Cross-Reference): FCH170N60; SPW20N60S5XK; SPW20N60C2; SPW20N60S5X;
Introduction Date: September 26, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
N-Channel 600V 21A (Tc) 227W (Tc) Through Hole TO-247AC
MOSFET 600V Vds 30V Vgs TO-247AC
MOSFET N-CH 600V 21A TO247AC
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 794397-SIHG22N60E-E3 | SIHG22N60E-E3-ND | SIHG22N60E-E3 | SIHG22N60E-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG22N60E-E3 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 227000 milliwatts |
