Win Source Part Number: 1277867-SIHG21N65EF-
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 208W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2322 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHG21
Drive Voltage (Max Rds On, Min Rds On): 10V
Trans MOSFET N-CH 650V 21A 3-Pin(3+Tab) TO-247AC Product overview: SIHG21N65EF-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 21A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 21A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG21N65EF-GE3 can be used for catalog matching and distributor lookup.
N-Channel 650V 21A (Tc) 208W (Tc) Through Hole TO-247AC
MOSFET, N-CH, 650V, 21A, TO-247AC ROHS COMPLIANT: YES
MOSFET N-CH 650V 21A TO247AC
MOSFET 650V Vds 30V Vgs TO-247AC
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1277867-SIHG21N65EF-GE3 | 278-SIHG21N65EF-GE3 | SIHG21N65EF-GE3-ND | 26AK5794 | SIHG21N65EF-GE3 | SIHG21N65EF-GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 650V 21A MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N-Ch, 650V, 21A, To-247Ac Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | ||||
| Package Type | TO-247; SOT3 | TO-247; TO-247-3 | TO-3; TO-247 | TO-247; TO-247-3 | ||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 650 volts |
