Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIHG21N65EF-GE3

Description
Win Source Part Number: 1277867-SIHG21N65EF- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 208W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2322 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHG21 Drive Voltage (Max Rds On, Min Rds On): 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277867-SIHG21N65EF-GE3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SIHG21N65EF-GE3-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 650V, 21A, To-247Ac Rohs Compliant Vishay - 26AK5794 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHG21N65EF-GE3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Win Source Part Number: 1277867-SIHG21N65EF- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 208W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2322 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHG21 Drive Voltage (Max Rds On, Min Rds On): 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277867-SIHG21N65EF-GE3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277867-SIHG21N65EF-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277867-SIHG21N65EF-GE3
Win Source Part Number: 1277867-SIHG21N65EF- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 208W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2322 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHG21 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1277867-SIHG21N65EF-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 208W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2322 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHG21
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - SIHG21N65EF-GE3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHG21N65EF-GE3-ND
Single FETs, MOSFETs SIHG21N65EF-GE3-ND
N-Channel 650V 21A (Tc) 208W (Tc) Through Hole TO-247AC

N-Channel 650V 21A (Tc) 208W (Tc) Through Hole TO-247AC

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
650V 21A MOSFET Transistor
278-SIHG21N65EF-GE3
650V 21A MOSFET Transistor 278-SIHG21N65EF-GE3
Trans MOSFET N-CH 650V 21A 3-Pin(3+Tab) TO-247AC Product overview: SIHG21N65EF-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 21A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 21A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG21N65EF-GE3 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 650V 21A 3-Pin(3+Tab) TO-247AC Product overview: SIHG21N65EF-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 21A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 21A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG21N65EF-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SIHG21N65EF-GE3
MOSFET SIHG21N65EF-GE3
MOSFET 650V Vds 30V Vgs TO-247AC

MOSFET 650V Vds 30V Vgs TO-247AC

Buy Now Datasheet
Mosfet, N-Ch, 650V, 21A, To-247Ac Rohs Compliant Vishay - 26AK5794 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 21A, To-247Ac Rohs Compliant Vishay
26AK5794
Mosfet, N-Ch, 650V, 21A, To-247Ac Rohs Compliant Vishay 26AK5794
MOSFET, N-CH, 650V, 21A, TO-247AC ROHS COMPLIANT: YES

MOSFET, N-CH, 650V, 21A, TO-247AC ROHS COMPLIANT: YES

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHG21N65EF-GE3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHG21N65EF-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHG21N65EF-GE3
MOSFET N-CH 650V 21A TO247AC

MOSFET N-CH 650V 21A TO247AC

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1277867-SIHG21N65EF-GE3 SIHG21N65EF-GE3-ND 278-SIHG21N65EF-GE3 SIHG21N65EF-GE3 26AK5794 SIHG21N65EF-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs 650V 21A MOSFET Transistor MOSFET Mosfet, N-Ch, 650V, 21A, To-247Ac Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Package Type TO-247; SOT3 TO-247; TO-247-3 TO-3; TO-247 TO-247; TO-247-3
MOSFET Operating Mode Enhancement
V(BR)DSS 650 volts
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