Win Source Part Number: 1277887-SIHG20N50E-G
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 179W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHG20
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-Ch 550V 19A E Series TO-247AC
MOSFET N-Ch 550V 19A E Series TO-247AC
N-Channel 500V 19A (Tc) 179W (Tc) Through Hole TO-247AC
MOSFET N-CH 500V 19A TO247AC
POWER FIELD-EFFECT TRANSISTOR, 19A I(D), 500V, 0.184OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AC. FREE 2 YEAR RADWELL WARRANTY
MOSFET 500V Vds 30V Vgs TO-247AC
| Win Source Electronics | RS Components, Ltd. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Radwell International | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1277887-SIHG20N50E-GE3 | 1219656 | 742-SIHG20N50E-GE3-ND | SIHG20N50E-GE3 | 88693468 | SIHG20N50E-GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel |
