N-Channel 600V 19A (Tc) 156W (Tc) Through Hole TO-247AC
Trans MOSFET N-CH 600V 19A 3-Pin(3+Tab) TO-247AC Product overview: SIHG180N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 19A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 19A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG180N60E-GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 19A TO247AC
Win Source Part Number: 1178446-SIHG180N60E-
Category: Discrete Semiconductor Products>Transistors
Series: E
Package: Tube
Standard Package: 25
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 156W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHG180
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET 650V Vds; 30V Vgs TO-247AC
MOSFET N-CH 600V 19A TO247AC
MOSFET, N-CH, 19A, 600V, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.155ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIHG180N60E-GE3-ND | 278-SIHG180N60E-GE3 | SIHG180N60E-GE3 | 1178446-SIHG180N60E-GE3 | SIHG180N60E-GE3 | SIHG180N60E-GE3 | 02AH2518 |
| Product Name | Single FETs, MOSFETs | 600V 19A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 19A, 600V, To-247Ac; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Package Type | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247; SOT3 | TO-247; TO-247-3 | TO-3; TO-247 | ||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 600 volts | 600 volts | |||||
| PD | 156000 milliwatts | 156000 milliwatts | 156000 milliwatts |
