N-Channel 800V 15A (Tc) 208W (Tc) Through Hole TO-247AC
Manufacturer: Vishay
Win Source Part Number: 894985-SIHG17N80E-GE
Series: E
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 800 V 15A (Tc) 208W (Tc) Through Hole TO-247AC
Package: TO-247-3
Package: Tube
Mounting: Through Hole
Family Name: SIHG17
Categories: Discrete Semiconductor Products
Case / Package: TO-247AC
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 91 pct.
Supply and Demand Status: Balance
Quantity per package: 500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
MOSFET N-CH 800V 15A TO247AC Product overview: SIHG17N80E-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 15A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 15A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG17N80E-GE3 can be used for catalog matching and distributor lookup.
MOSFET 800V Vds 30V Vgs TO-247AC
MOSFET N-CH 800V 15A TO247AC
MOSFET, N-CH, 800V, 15A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIHG17N80E-GE3-ND | 894985-SIHG17N80E-GE3 | 278-SIHG17N80E-GE3 | SIHG17N80E-GE3 | SIHG17N80E-GE3 | 28AC2103 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG17N80E-GE3 | 800V 15A MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 800V, 15A, To-247Ac; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3; TO-247AC | Tube | TO-247; TO-247-3 | TO-3; TO-247 | |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| MOSFET Operating Mode | Enhancement |