Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHG17N60D-E3

N-Channel 600V 17A (Tc) 277.8W (Tc) Through Hole TO-247AC

Win Source Part Number: 1277874-SIHG17N60D-E3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 277.8W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 82 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIHG17N60D-E3CT,SIHG17N60D-E3CT
Base Product Number: SIHG17
Drive Voltage (Max Rds On, Min Rds On): 10V