Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIHG17N60D-E3

Description
Win Source Part Number: 1277874-SIHG17N60D-E 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 277.8W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 82 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIHG17N60D-E3CT,SIHG 17N60D-E3CT Base Product Number: SIHG17 Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1277874-SIHG17N60D-E 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 277.8W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 82 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIHG17N60D-E3CT,SIHG 17N60D-E3CT Base Product Number: SIHG17 Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277874-SIHG17N60D-E3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277874-SIHG17N60D-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277874-SIHG17N60D-E3
Win Source Part Number: 1277874-SIHG17N60D-E 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 277.8W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 82 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIHG17N60D-E3CT,SIHG 17N60D-E3CT Base Product Number: SIHG17 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1277874-SIHG17N60D-E3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 277.8W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 82 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIHG17N60D-E3CT,SIHG17N60D-E3CT
Base Product Number: SIHG17
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - SIHG17N60D-E3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHG17N60D-E3-ND
Single FETs, MOSFETs SIHG17N60D-E3-ND
N-Channel 600V 17A (Tc) 277.8W (Tc) Through Hole TO-247AC

N-Channel 600V 17A (Tc) 277.8W (Tc) Through Hole TO-247AC

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Sheung Wan, Hong Kong
MOSFET 600V Vds 30V Vgs TO-247AC

MOSFET 600V Vds 30V Vgs TO-247AC

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHG17N60D-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHG17N60D-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHG17N60D-E3
MOSFET N-CH 600V 17A TO247AC

MOSFET N-CH 600V 17A TO247AC

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1277874-SIHG17N60D-E3 SIHG17N60D-E3-ND SIHG17N60D-E3 SIHG17N60D-E3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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