Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG16N50C-E3 SIHG16N50C-E3

Manufacturer: Vishay
Win Source Part Number: 064637-SIHG16N50C-E3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AC
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 68nC @ 10V
Max Input Capacitance: 1900pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 380 mOhm @ 8A, 10V
Alternative Parts (Cross-Reference): STW14NM50FD; SiHG16N50C; SiHG16N50CPb; SiHG16N50C-E3;
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

MOSFET N-CH 500V 16A TO247AC

Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-247AC Product overview: SIHG16N50C-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 16A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SIHG16N50C-E3 can be used for catalog matching and distributor lookup.

N-Channel 500V 16A (Tc) 250W (Tc) Through Hole TO-247AC