Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHG16N50C-E3

Description
MOSFET N-CH 500V 16A TO247AC
Request a Quote Datasheet
Description
MOSFET N-CH 500V 16A TO247AC
Request a Quote Datasheet

Suppliers

Company
Product
Description
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Single FETs, MOSFETs - SIHG16N50C-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIHG16N50C-E3
Single FETs, MOSFETs SIHG16N50C-E3
MOSFET N-CH 500V 16A TO247AC

MOSFET N-CH 500V 16A TO247AC

Supplier's Site Datasheet
Single FETs, MOSFETs - SIHG16N50C-E3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHG16N50C-E3-ND
Single FETs, MOSFETs SIHG16N50C-E3-ND
N-Channel 500V 16A (Tc) 250W (Tc) Through Hole TO-247AC

N-Channel 500V 16A (Tc) 250W (Tc) Through Hole TO-247AC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG16N50C-E3 - 064637-SIHG16N50C-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG16N50C-E3
064637-SIHG16N50C-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG16N50C-E3 064637-SIHG16N50C-E3
Manufacturer: Vishay Win Source Part Number: 064637-SIHG16N50C-E3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AC Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 68nC @ 10V Max Input Capacitance: 1900pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 380 mOhm @ 8A, 10V Alternative Parts (Cross-Reference): STW14NM50FD; SiHG16N50C; SiHG16N50CPb; SiHG16N50C-E3; Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 064637-SIHG16N50C-E3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AC
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 68nC @ 10V
Max Input Capacitance: 1900pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 380 mOhm @ 8A, 10V
Alternative Parts (Cross-Reference): STW14NM50FD; SiHG16N50C; SiHG16N50CPb; SiHG16N50C-E3;
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 500V Vds 30V Vgs TO-247AC

MOSFET 500V Vds 30V Vgs TO-247AC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHG16N50C-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHG16N50C-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHG16N50C-E3
MOSFET N-CH 500V 16A TO247AC

MOSFET N-CH 500V 16A TO247AC

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SIHG16N50C-E3 SIHG16N50C-E3-ND 064637-SIHG16N50C-E3 SIHG16N50C-E3 SIHG16N50C-E3
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG16N50C-E3 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 500 volts 500 volts
IDSS 16000 milliamps
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