The Vishay N-Channel MOSFET, part number SiHG15N80AE, features a maximum drain-source voltage of 800V and a continuous drain current rating of 13A at a case temperature of 25¬8C. It is housed in a TO-247AC package and is compliant with RoHS standards. The device exhibits a typical on-state resistance (R_DS(on)) of 0.304Oc at a gate-source voltage of 10V. It has a maximum power dissipation capability of 156W and can handle pulsed drain currents up to 29A. The MOSFET is suitable for applications in server and telecom power supplies, switch mode power supplies, and various industrial applications such as motor drives and battery chargers. Its low figure-of-merit and effective capacitance contribute to reduced switching and conduction losses, making it a viable option for high-efficiency designs.
MOSFET, N-CH, 800V, 13A, TO-247AC ROHS COMPLIANT: YES
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 93AH0383 |
| Product Name | Mosfet, N-Ch, 800V, 13A, To-247Ac Rohs Compliant Vishay |
| Package Type | TO-3; TO-247 |
