Manufacturer: Vishay
Win Source Part Number: 132228-SIHG14N50D-E3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 208W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AC
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 14A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 58nC @ 10V
Max Input Capacitance: 1144pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 400 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
N-Channel 500V 14A (Tc) 208W (Tc) Through Hole TO-247AC
MOSFET N-CH 500V 14A TO247AC
MOSFET 500V Vds 30V Vgs TO-247AC
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 132228-SIHG14N50D-E3 | SIHG14N50D-E3-ND | SIHG14N50D-E3 | SIHG14N50D-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG14N50D-E3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 500 volts | |||
| PD | 208000 milliwatts |
