MOSFET N-CH 600V 29A TO247AC Product overview: SIHG105N60EF-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 29A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 29A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG105N60EF-GE3
N-Channel 600V 29A (Tc) 208W (Tc) Through Hole TO-247AC
Win Source Part Number: 992993-SIHG105N60EF-
Category: Discrete Semiconductor Products>Transistors
Series: EF
Package: Tube
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 208W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 50 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SIHG105N60EF-GE3
Base Product Number: SIHG105
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 600V 29A TO247AC
MOSFET, N-CH, 600V, 29A, 150DEG C, 208W ROHS COMPLIANT: YES
| RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2047209P | 2047209 | 278-SIHG105N60EF-GE3 | 742-SIHG105N60EF-GE3-ND | 992993-SIHG105N60EF-GE3 | SIHG105N60EF-GE3 | 77AH0223 |
| Product Name | MOSFETs | MOSFETs | 600V 29A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 29A, 150Deg C, 208W Rohs Compliant Vishay |
| Package Type | TO-247; TO-247 | TO-247; To-247ac | Tube | TO-247; TO-247-3 | TO-247; SOT3 | TO-247; TO-247-3 | TO-3 |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||
| Number of units in IC | 1 |
