Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHG065N65E-GE3

The SiHG065N65E is an N-channel MOSFET designed for high-efficiency switch mode power supplies, server and telecom power systems, and industrial applications such as motor drives and solar inverters. It is packaged in a TO-247AC case with a maximum drain-source voltage of 650 V and a continuous drain current of 40 A at 25 °C. The device has a typical on-state resistance of 0.056 Ω at 10 V gate-source voltage and a total gate charge of up to 132 nC. It supports single pulse avalanche energy up to 249 mJ and operates over a junction temperature range from -55 °C to +150 °C. The thermal resistance from junction to case is 0.5 °C/W. The part is lead-free and halogen-free, as indicated by the -GE3 suffix in the ordering code.