Win Source Part Number: 1165078-SIHG039N60EF
Category: Discrete Semiconductor Products>Transistors
Series: EF
Package: Tube
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 357W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4323 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHG039
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 600V 61A (Tc) 357W (Tc) Through Hole TO-247AC
Power Field-Effect Transistor, Product overview: SIHG039N60EF-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG039N60EF-GE3
MOSFET, N-CH, 600V, 61A, TO-247AC-3; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes
MOSFET EF Series Power MOSFET With Fast Body Diode; 4th Gen E Series Technology
MOSFET N-CH 600V 61A TO247AC
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1165078-SIHG039N60EF-GE3 | SIHG039N60EF-GE3-ND | 278-SIHG039N60EF-GE3 | 10AH0965 | SIHG039N60EF-GE3 | SIHG039N60EF-GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET Transistor | Mosfet, N-Ch, 600V, 61A, To-247Ac-3; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | ||||
| PD | 357000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | TO-247; SOT3 | TO-247; TO-247-3 | TO-3; TO-247 | Through Hole |
