The Vishay SiHG039N60E is an N-channel MOSFET housed in a TO-247AC package, capable of handling a continuous drain current of 63A and a maximum drain-source voltage of 600V. It features a low on-resistance of 0.034Oc at a gate-source voltage of 10V, which contributes to reduced conduction losses. The device has a maximum power dissipation rating of 357W and can withstand pulsed drain currents up to 199A. It operates effectively within a junction temperature range of -55¬8C to +150¬8C. The MOSFET is suitable for various applications, including server and telecom power supplies, switch mode power supplies, and industrial motor drives. Its fourth-generation E series technology ensures low figure-of-merit and effective capacitance, making it a reliable choice for high-performance applications.
Trans MOSFET N-CH 600V 63A 3-Pin(3+Tab) TO-247AC Product overview: SIHG039N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 63A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 63A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG039N60E-GE3 can be used for catalog matching and distributor lookup.
N-Channel 600V 63A (Tc) 357W (Tc) Through Hole TO-247AC
Win Source Part Number: 1178420-SIHG039N60E-
Category: Discrete Semiconductor Products>Transistors
Series: E
Package: Tube
Standard Package: 25
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 32A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 357W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHG039
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 600V 63A TO247AC
MOSFET 650V Vds; 30V Vgs TO-247AC
MOSFET, N-CH, 63A, 600V, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.034ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIHG039N60E-GE3 | SIHG039N60E-GE3-ND | 1178420-SIHG039N60E-GE3 | SIHG039N60E-GE3 | SIHG039N60E-GE3 | 99AC9557 |
| Product Name | 600V 63A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 63A, 600V, To-247Ac; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 600 volts | |||||
| Transconductance | 0.0170 kS | |||||
| PD | 357 milliwatts | 357000 milliwatts |
