Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHG033N60SF-GE3

The SiHG033N60SF is an N-channel MOSFET in a TO-247AC package designed for high-efficiency power conversion applications such as server and telecom power supplies, switch mode power supplies, and solar inverters. It has a drain-source voltage rating of 600 V, a typical on-state resistance of 0.033 Ω at 25 °C and 10 V gate-source voltage, and a total gate charge of 258 nC. The device is rated for a continuous drain current of 87 A at 25 °C and 55 A at 150 °C junction temperature, with a maximum power dissipation of 595 W. It features single-pulse avalanche energy rating of 1555 mJ and operates over a junction and storage temperature range of -55 to +150 °C. The package is lead-free and halogen-free, meeting RoHS compliance. Thermal resistance from junction to case is 0.21 °C/W. The device is qualified under AEC-Q200.