Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHFR9220-GE3

Description
P-Channel 200V 3.6A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet
Description
P-Channel 200V 3.6A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 742-SIHFR9220-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SIHFR9220-GE3-ND
Single FETs, MOSFETs 742-SIHFR9220-GE3-ND
P-Channel 200V 3.6A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount TO-252AA

P-Channel 200V 3.6A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1225037-SIHFR9220-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1225037-SIHFR9220-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1225037-SIHFR9220-GE3
Win Source Part Number: 1225037-SIHFR9220-GE 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): SIHFR9220GE3; ECCN: EAR99 Fake Threat In the Open Market: 75 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: 742-SIHFR9220-GE3DKR ,742-SIHFR9220-GE3CT ,742-SIHFR9220-GE3TR Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1225037-SIHFR9220-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): SIHFR9220GE3;
ECCN: EAR99
Fake Threat In the Open Market: 75 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SIHFR9220-GE3DKR,742-SIHFR9220-GE3CT,742-SIHFR9220-GE3TR
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - SIHFR9220-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIHFR9220-GE3
Single FETs, MOSFETs SIHFR9220-GE3
MOSFET P-CHANNEL 200V

MOSFET P-CHANNEL 200V

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHFR9220-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHFR9220-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHFR9220-GE3
MOSFET P-CHANNEL 200V

MOSFET P-CHANNEL 200V

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 742-SIHFR9220-GE3-ND 1225037-SIHFR9220-GE3 SIHFR9220-GE3 SIHFR9220-GE3
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel P-Channel; P-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK) TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 -55degC ~ 150degC (TJ)
PD 2500 to 42000 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data

Similar Products

Single FETs, MOSFETs - AUIRFR9024NTRL - ODG (Origin Data Global)
Specs
Polarity P-Channel; P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 55 volts
View Details
7 suppliers
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - UF3SC065040B7S - Acme Chip Technology Co., Limited
Specs
Package Type TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packing Method Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
View Details
GaAs Fet Switches - KS209 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 3000 MHz
View Details