TRANSISTOR 1100 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-4, FET General Purpose Small Signal Product overview: SIHFL9110TR-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 1100 mA, 100 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1100 mA, 100 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHFL9110TR-GE3 can be used for catalog matching and distributor lookup.
P-Channel 100V 1.1A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
MOSFET P-CH 100V 1.1A SOT223
MOSFET P-CH 100V 1.1A SOT223
MOSFET P-CH 100V 1.1A SOT223
Manufacturer: Vishay
Win Source Part Number: 894982-SIHFL9110TR-G
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: P-Channel 100 V 1.1A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
Package: TO-261-4, TO-261AA
Package: Reel - TR
Mounting: Surface Mount
Family Name: SIHFL9110
Categories: Discrete Semiconductor Products
Case / Package: SOT-223
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 79 pct.
Supply and Demand Status: Balance
Quantity per package: 2500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 50 Weeks
HTSUS: 8541.29.0095
MOSFET 100V Vds 20V Vgs SOT-223
MOSFET P-CH 100V 1.1A SOT223
MOSFET, P-CH, 100V, 1.1A, SOT-223 ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIHFL9110TR-GE3 | 742-SIHFL9110TR-GE3TR-ND | SIHFL9110TR-GE3 | 894982-SIHFL9110TR-GE3 | SIHFL9110TR-GE3 | SIHFL9110TR-GE3 | 57AJ0382 |
| Product Name | P-Channel 1100 mA 100 V MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHFL9110TR-GE3 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, 100V, 1.1A, Sot-223 Rohs Compliant Vishay |
| PD | 3100 milliwatts | 2000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | ||||
| Package Type | SOT223; TO-261-4, TO-261AA | SOT223; TO-261-4, TO-261AA | SOT3; SOT-223 | TO-261-4, TO-261AA | TO-3; SOT223 |
