Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHF9Z24STRR-GE3

Description
P-Channel 60V 11A (Tc) 3.7W (Ta), 60W (Tc) Surface Mount D²PAK (TO-263)
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Description
P-Channel 60V 11A (Tc) 3.7W (Ta), 60W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

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Supplier Links
Single FETs, MOSFETs - 742-SIHF9Z24STRR-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SIHF9Z24STRR-GE3DKR-ND
Single FETs, MOSFETs 742-SIHF9Z24STRR-GE3DKR-ND
P-Channel 60V 11A (Tc) 3.7W (Ta), 60W (Tc) Surface Mount D²PAK (TO-263)

P-Channel 60V 11A (Tc) 3.7W (Ta), 60W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - 742-SIHF9Z24STRR-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SIHF9Z24STRR-GE3CT-ND
Single FETs, MOSFETs 742-SIHF9Z24STRR-GE3CT-ND
P-Channel 60V 11A (Tc) 3.7W (Ta), 60W (Tc) Surface Mount D²PAK (TO-263)

P-Channel 60V 11A (Tc) 3.7W (Ta), 60W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - 742-SIHF9Z24STRR-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SIHF9Z24STRR-GE3TR-ND
Single FETs, MOSFETs 742-SIHF9Z24STRR-GE3TR-ND
P-Channel 60V 11A (Tc) 3.7W (Ta), 60W (Tc) Surface Mount D²PAK (TO-263)

P-Channel 60V 11A (Tc) 3.7W (Ta), 60W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 965567-SIHF9Z24STRR-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
965567-SIHF9Z24STRR-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 965567-SIHF9Z24STRR-GE3
Win Source Part Number: 965567-SIHF9Z24STRR- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 800 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK (TO-263) Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 82 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: 742-SIHF9Z24STRR-GE3 CT,742-SIHF9Z24STRR- GE3DKR,742-SIHF9Z24S TRR-GE3TR Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 965567-SIHF9Z24STRR-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 800
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 82 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SIHF9Z24STRR-GE3CT,742-SIHF9Z24STRR-GE3DKR,742-SIHF9Z24STRR-GE3TR
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Singapore, Singapore
60V 11A MOSFET Transistor
278-SIHF9Z24STRR-GE3
60V 11A MOSFET Transistor 278-SIHF9Z24STRR-GE3
Trans MOSFET P-CH Si 60V 11A 3-Pin(2+Tab) D2PAK T/R Product overview: SIHF9Z24STRR-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHF9Z24STRR-GE3 can be used for catalog matching and distributor lookup.

Trans MOSFET P-CH Si 60V 11A 3-Pin(2+Tab) D2PAK T/R Product overview: SIHF9Z24STRR-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHF9Z24STRR-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 742-SIHF9Z24STRR-GE3DKR-ND 965567-SIHF9Z24STRR-GE3 278-SIHF9Z24STRR-GE3
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 60V 11A MOSFET Transistor
Polarity P-Channel P-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3 Tape and Reel
PD 3700 to 60000 milliwatts 3700 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 C (-67 F)
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