Win Source Part Number: 1277904-SIHF9630S-GE
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel (TR)
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 57 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SIHF9630S-GE3TR
Base Product Number: SIHF9630
Drive Voltage (Max Rds On, Min Rds On): 10V
P-Channel 200V 6.5A (Tc) 3W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263)
MOSFET P-CH 200V 6.5A D2PAK
MOSFET P-CH 200V 6.5A D2PAK
MOSFET -200V Vds 20V Vgs D2PAK (TO-263)
MOSFET P-CH 200V 6.5A D2PAK
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1277904-SIHF9630S-GE3 | 742-SIHF9630S-GE3TR-ND | SIHF9630S-GE3 | SIHF9630S-GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel |
