N-Channel 500V 8A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D²PAK (TO-263)
Win Source Part Number: 1277912-SIHF840LCS-G
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel (TR)
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SIHF840LCS-GE3TR
Base Product Number: SIHF840
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
MOSFET N-CH 500V 8A D2PAK
| DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 742-SIHF840LCS-GE3TR-ND | 1277912-SIHF840LCS-GE3 | SIHF840LCS-GE3 | 81AC3452 | SIHF840LCS-GE3 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Mosfet N-Channel 500V Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel |
