Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHF5N50D-E3 SIHF5N50D-E3

Description
Manufacturer: Vishay Win Source Part Number: 1096425-SIHF5N50D-E3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Full Pack Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5.3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 325pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 1096425-SIHF5N50D-E3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Full Pack Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5.3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 325pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHF5N50D-E3 - 1096425-SIHF5N50D-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHF5N50D-E3
1096425-SIHF5N50D-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHF5N50D-E3 1096425-SIHF5N50D-E3
Manufacturer: Vishay Win Source Part Number: 1096425-SIHF5N50D-E3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Full Pack Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5.3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 325pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096425-SIHF5N50D-E3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220 Full Pack
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 5.3A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 325pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
MOSFETs - 7879159 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7879159
MOSFETs 7879159
MOSFET N-Ch 500V 5.3A Low Cap. TO220FP

MOSFET N-Ch 500V 5.3A Low Cap. TO220FP

Supplier's Site
MOSFETs - 1451658 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1451658
MOSFETs 1451658
MOSFET N-Ch 500V 5.3A Low Cap. TO220FP

MOSFET N-Ch 500V 5.3A Low Cap. TO220FP

Supplier's Site
Single FETs, MOSFETs - SIHF5N50D-E3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHF5N50D-E3-ND
Single FETs, MOSFETs SIHF5N50D-E3-ND
N-Channel 500V 5.3A (Tc) 30W (Tc) Through Hole TO-220 Full Pack

N-Channel 500V 5.3A (Tc) 30W (Tc) Through Hole TO-220 Full Pack

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHF5N50D-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHF5N50D-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHF5N50D-E3
MOSFET N-CH 500V 5.3A TO220

MOSFET N-CH 500V 5.3A TO220

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 500V Vds 30V Vgs TO-220 FULLPAK

MOSFET 500V Vds 30V Vgs TO-220 FULLPAK

Buy Now Datasheet
Mosfet Transistor, N Channel, 5.3 A, 500 V, 1.2 Ohm, 10 V, 3 V Rohs Compliant Vishay - 62W0509 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 5.3 A, 500 V, 1.2 Ohm, 10 V, 3 V Rohs Compliant Vishay
62W0509
Mosfet Transistor, N Channel, 5.3 A, 500 V, 1.2 Ohm, 10 V, 3 V Rohs Compliant Vishay 62W0509
MOSFET Transistor, N Channel, 5.3 A, 500 V, 1.2 ohm, 10 V, 3 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 5.3 A, 500 V, 1.2 ohm, 10 V, 3 V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics RS Components, Ltd. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1096425-SIHF5N50D-E3 7879159 SIHF5N50D-E3-ND SIHF5N50D-E3 SIHF5N50D-E3 62W0509
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHF5N50D-E3 MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet Transistor, N Channel, 5.3 A, 500 V, 1.2 Ohm, 10 V, 3 V Rohs Compliant Vishay
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 500 volts
PD 30000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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