MOSFET N-CH 600V 29A TO220
Manufacturer: Vishay
Win Source Part Number: 933786-SIHF30N60E-GE
Series: E
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 29A (Tc) 37W (Tc) Through Hole
Package: TO-220-3 Full Pack
Package: Tube
Mounting: Through Hole
Family Name: SIHF30
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 79 pct.
Supply and Demand Status: Balance
Quantity per package: 1
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SIHF30N60E-GE3DKRINA
N-Channel 600V 29A (Tc) 37W (Tc) Through Hole
MOSFET N-CH 600V 29A TO220
MOSFET 600V 125mOhms@10V 29A N-Ch E-SRS
MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
| ODG (Origin Data Global) | RS Components, Ltd. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIHF30N60E-GE3 | 1451911 | 933786-SIHF30N60E-GE3 | 742-SIHF30N60E-GE3-ND | SIHF30N60E-GE3 | 880-SIHF30N60E-GE3 | SIHF30N60E-GE3 |
| Product Name | Single FETs, MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHF30N60E-GE3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET 600V 125mOhms@10V 29A N-Ch E-SRS | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||||
| V(BR)DSS | 600 volts | 600 volts | |||||
| IDSS | 29000 milliamps | ||||||
| PD | 37000 milliwatts | 37000 milliwatts |
