Manufacturer: Vishay
Win Source Part Number: 933786-SIHF30N60E-GE
Series: E
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 29A (Tc) 37W (Tc) Through Hole
Package: TO-220-3 Full Pack
Package: Tube
Mounting: Through Hole
Family Name: SIHF30
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 79 pct.
Supply and Demand Status: Balance
Quantity per package: 1
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SIHF30N60E-GE3DKRINA
600V 29A N-Channel MOSFET TO-220AB Product overview: SIHF30N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 29A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 29A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHF30N60E-GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 29A TO220
N-Channel 600V 29A (Tc) 37W (Tc) Through Hole
MOSFET 600V 125mOhms@10V 29A N-Ch E-SRS
MOSFET N-CH 600V 29A TO220
MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | RS Components, Ltd. | DigiKey | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 933786-SIHF30N60E-GE3 | 278-SIHF30N60E-GE3 | SIHF30N60E-GE3 | 1451911 | 742-SIHF30N60E-GE3-ND | 880-SIHF30N60E-GE3 | SIHF30N60E-GE3 | SIHF30N60E-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHF30N60E-GE3 | N-Channel 600V 29A MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | Single FETs, MOSFETs | MOSFET 600V 125mOhms@10V 29A N-Ch E-SRS | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3 | TO-220; TO-220-3 Full Pack | TO-220; To-220fp | TO-220; TO-220-3 Full Pack | TO-220; TO-220-3 Full Pack | |||
| PD | 37000 milliwatts | 37000 milliwatts | 37000 milliwatts | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON |
