Vishay Precision Group Single FETs, MOSFETs SIHF30N60E-GE3

Description
MOSFET N-CH 600V 29A TO220
  • Single FETs, MOSFETs - SIHF30N60E-GE3 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHF30N60E-GE3 - 933786-SIHF30N60E-GE3 - Win Source Electronics
    Win Source Electronics
  • MOSFETs - 1451911 - RS Components, Ltd.
    RS Components, Ltd.
  • Single FETs, MOSFETs - 742-SIHF30N60E-GE3-ND - DigiKey
    DigiKey
  • MOSFET 600V 125mOhms@10V 29A N-Ch E-SRS - 880-SIHF30N60E-GE3 - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHF30N60E-GE3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
MOSFET N-CH 600V 29A TO220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SIHF30N60E-GE3 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIHF30N60E-GE3
Single FETs, MOSFETs SIHF30N60E-GE3
MOSFET N-CH 600V 29A TO220

MOSFET N-CH 600V 29A TO220

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHF30N60E-GE3 - 933786-SIHF30N60E-GE3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHF30N60E-GE3
933786-SIHF30N60E-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHF30N60E-GE3 933786-SIHF30N60E-GE3
Manufacturer: Vishay Win Source Part Number: 933786-SIHF30N60E-GE 3 Series: E Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 600 V 29A (Tc) 37W (Tc) Through Hole Package: TO-220-3 Full Pack Package: Tube Mounting: Through Hole Family Name: SIHF30 Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 79 pct. Supply and Demand Status: Balance Quantity per package: 1 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 51 Weeks HTSUS: 8541.29.0095 Other Part Number: SIHF30N60E-GE3DKRINA CTIVE, SIHF30N60E-GE3DKR, SIHF30N60E-GE3DKR-ND , SIHF30N60E-GE3CT, SIHF30N60E-GE3CT-ND, SIHF30N60E-GE3TR, SIHF30N60E-GE3TR-ND, SIHF30N60E-GE3TRINAC TIVE

Manufacturer: Vishay
Win Source Part Number: 933786-SIHF30N60E-GE3
Series: E
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 29A (Tc) 37W (Tc) Through Hole
Package: TO-220-3 Full Pack
Package: Tube
Mounting: Through Hole
Family Name: SIHF30
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 79 pct.
Supply and Demand Status: Balance
Quantity per package: 1
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SIHF30N60E-GE3DKRINACTIVE, SIHF30N60E-GE3DKR, SIHF30N60E-GE3DKR-ND, SIHF30N60E-GE3CT, SIHF30N60E-GE3CT-ND, SIHF30N60E-GE3TR, SIHF30N60E-GE3TR-ND, SIHF30N60E-GE3TRINACTIVE

Buy Now Datasheet
MOSFETs - 1451911 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1451911
MOSFETs 1451911
MOSFET 600V 29A E Series TO-220FP

MOSFET 600V 29A E Series TO-220FP

Supplier's Site
Single FETs, MOSFETs - 742-SIHF30N60E-GE3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SIHF30N60E-GE3-ND
Single FETs, MOSFETs 742-SIHF30N60E-GE3-ND
N-Channel 600V 29A (Tc) 37W (Tc) Through Hole

N-Channel 600V 29A (Tc) 37W (Tc) Through Hole

Buy Now Datasheet
MOSFET 600V 125mOhms@10V 29A N-Ch E-SRS - 880-SIHF30N60E-GE3 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET 600V 125mOhms@10V 29A N-Ch E-SRS
880-SIHF30N60E-GE3
MOSFET 600V 125mOhms@10V 29A N-Ch E-SRS 880-SIHF30N60E-GE3
MOSFET 600V 125mOhms@10V 29A N-Ch E-SRS

MOSFET 600V 125mOhms@10V 29A N-Ch E-SRS

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SIHF30N60E-GE3
MOSFET SIHF30N60E-GE3
MOSFET 600V Vds 30V Vgs TO-220 FULLPAK

MOSFET 600V Vds 30V Vgs TO-220 FULLPAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHF30N60E-GE3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHF30N60E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHF30N60E-GE3
MOSFET N-CH 600V 29A TO220

MOSFET N-CH 600V 29A TO220

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics RS Components, Ltd. DigiKey Utmel Electronic Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SIHF30N60E-GE3 933786-SIHF30N60E-GE3 1451911 742-SIHF30N60E-GE3-ND 880-SIHF30N60E-GE3 SIHF30N60E-GE3 SIHF30N60E-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHF30N60E-GE3 MOSFETs Single FETs, MOSFETs MOSFET 600V 125mOhms@10V 29A N-Ch E-SRS MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide) SILICON
V(BR)DSS 600 volts 600 volts
IDSS 29000 milliamps
PD 37000 milliwatts 37000 milliwatts
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