Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHF28N60EF-GE3

N-Channel 600V 28A (Tc) 39W (Tc) Through Hole TO-220 Full Pack

Power Field-Effect Transistor, 28A I(D), 600V, 0.123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULLPAK-3 Product overview: SIHF28N60EF-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 28A, 600V, 0.123ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 28A, 600V, 0.123ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHF28N60EF-GE3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 933785-SIHF28N60EF-GE3
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 28A (Tc) 39W (Tc) Through Hole TO-220 Full Pack
Package: TO-220-3 Full Pack
Package: Tube
Mounting: Through Hole
Family Name: SIHF28
Categories: Discrete Semiconductor Products
Case / Package: TO-220 Full Pack
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095