Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHF23N60E-GE3

N-Channel 600V 23A (Tc) 35W (Tc) Through Hole TO-220 Full Pack

Manufacturer: Vishay
Win Source Part Number: 1096424-SIHF23N60E-GE3
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220 Full Pack
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 23A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 95nC @ 10V
Max Input Capacitance: 2418pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 158 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

MOSFET N-CH 600V 23A TO220 Product overview: SIHF23N60E-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 23A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 23A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHF23N60E-GE3 can be used for catalog matching and distributor lookup.