Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIHF22N60S-E3

Description
Win Source Part Number: 1277857-SIHF22N60S-E 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 250W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220 Full Pack Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 81 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIHF22N60S-E3CT,SIHF 22N60S-E3CT Base Product Number: SIHF22 Product Status: Obsolete
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277857-SIHF22N60S-E3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SIHF22N60S-E3-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHF22N60S-E3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Win Source Part Number: 1277857-SIHF22N60S-E 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 250W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220 Full Pack Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 81 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIHF22N60S-E3CT,SIHF 22N60S-E3CT Base Product Number: SIHF22 Product Status: Obsolete
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277857-SIHF22N60S-E3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277857-SIHF22N60S-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277857-SIHF22N60S-E3
Win Source Part Number: 1277857-SIHF22N60S-E 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 250W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220 Full Pack Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 81 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIHF22N60S-E3CT,SIHF 22N60S-E3CT Base Product Number: SIHF22 Product Status: Obsolete

Win Source Part Number: 1277857-SIHF22N60S-E3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIHF22N60S-E3CT,SIHF22N60S-E3CT
Base Product Number: SIHF22
Product Status: Obsolete

Buy Now Datasheet
Single FETs, MOSFETs - SIHF22N60S-E3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHF22N60S-E3-ND
Single FETs, MOSFETs SIHF22N60S-E3-ND
N-Channel 600V 22A (Tc) 250W (Tc) Through Hole TO-220 Full Pack

N-Channel 600V 22A (Tc) 250W (Tc) Through Hole TO-220 Full Pack

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHF22N60S-E3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHF22N60S-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHF22N60S-E3
MOSFET N-CH 600V 22A TO220

MOSFET N-CH 600V 22A TO220

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors RF Transistors
Product Number 1277857-SIHF22N60S-E3 SIHF22N60S-E3-ND SIHF22N60S-E3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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