N-Channel 500V 18A (Tc) 39W (Tc) Through Hole TO-220 Full Pack
MOSFET N-CH 500V 18A TO220 Product overview: SIHF18N50D-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 18A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 18A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHF18N50D-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1096422-SIHF18N50D-E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 39W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220 Full Pack
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 76nC @ 10V
Max Input Capacitance: 1500pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 280 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
MOSFET N-CH 500V 18A TO220
MOSFET N-CH 500V 18A TO-220FP
MOSFET, N-CH, 500V, 18A, 150DEG C, 39W; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET 500V Vds 30V Vgs TO-220 FULLPAK
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 742-SIHF18N50D-E3-ND | 278-SIHF18N50D-E3 | 1096422-SIHF18N50D-E3 | SIHF18N50D-E3 | 880-SIHF18N50D-E3 | 63W4111 | SIHF18N50D-E3 |
| Product Name | Single FETs, MOSFETs | 500V 18A TO220 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHF18N50D-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 500V 18A TO-220FP | Mosfet, N-Ch, 500V, 18A, 150Deg C, 39W; Channel Type Vishay | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-220; TO-220-3 Full Pack | Tube | TO-220; SOT3; TO-220 Full Pack | TO-220; TO-220-3 Full Pack | TO-3 | ||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | |||||
| PD | 39 milliwatts | 39000 milliwatts | 39000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
