Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHF15N60E SIHF15N60E

Manufacturer: Vishay Win Source Part Number: 211702-SIHF15N60E Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 34W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Full Pack Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 15A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 1350pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 280 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management, Communications & Networking, Lighting, Portable Devices, Computers & Computer Peripherals, Alternative Energy, Motor Drive & Control