Manufacturer: Vishay
Win Source Part Number: 1037342-SIHF15N60E-G
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 34W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220 Full Pack
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 15A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 78nC @ 10V
Max Input Capacitance: 1350pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 280 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
N-Channel 600V 15A (Tc) 34W (Tc) Through Hole TO-220 Full Pack
600V 15A N-Channel MOSFET TO-220AB 280mR Product overview: SIHF15N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 15A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 15A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHF15N60E-GE3 can be used for catalog matching and distributor lookup.
MOSFET 600V 280mOhms@10V 15A N-Ch E-SRS
MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
MOSFET, N-CH, 600V, 15A, 150DEG C, 34W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:15A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET N-CH 600V 15A TO220
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1037342-SIHF15N60E-GE3 | SIHF15N60E-GE3-ND | 278-SIHF15N60E-GE3 | 880-SIHF15N60E-GE3 | SIHF15N60E-GE3 | 19X1935 | SIHF15N60E-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHF15N60E-GE3 | Single FETs, MOSFETs | N-Channel 600V 15A MOSFET Transistor | MOSFET 600V 280mOhms@10V 15A N-Ch E-SRS | MOSFET | Mosfet, N-Ch, 600V, 15A, 150Deg C, 34W; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 600 volts | 600 volts | |||||
| PD | 34000 milliwatts | 34000 milliwatts | 34000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | TO-220; SOT3; TO-220 Full Pack | TO-220; TO-220-3 Full Pack | TO-3 | TO-220; TO-220-3 Full Pack |
