N-Channel 600V 12A (Tc) 33W (Tc) Through Hole TO-220 Full Pack
Manufacturer: Vishay
Win Source Part Number: 894974-SIHF12N60E-GE
Series: E
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 12A (Tc) 33W (Tc) Through Hole TO-220 Full Pack
Package: TO-220-3 Full Pack
Package: Reel - TR
Mounting: Through Hole
Family Name: SIHF12
Categories: Discrete Semiconductor Products
Case / Package: TO-220 Full Pack
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 88 pct.
Supply and Demand Status: Balance
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SIHF12N60E-GE3DKR, SIHF12N60E-GE3DKR-ND
600V 12A N-Channel MOSFET TO-220 380mR Product overview: SIHF12N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 12A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 12A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHF12N60E-GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 12A TO220
MOSFET N-CH 600V 12A TO220
MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
MOSFET Transistor, N Channel, 12 A, 600 V, 0.32 ohm, 10 V, 2 V RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 742-SIHF12N60E-GE3-ND | 894974-SIHF12N60E-GE3 | 278-SIHF12N60E-GE3 | SIHF12N60E-GE3 | SIHF12N60E-GE3 | SIHF12N60E-GE3 | 19X1934 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHF12N60E-GE3 | N-Channel 600V 12A TO-220 MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet Transistor, N Channel, 12 A, 600 V, 0.32 Ohm, 10 V, 2 V Rohs Compliant Vishay |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Package Type | TO-220; TO-220-3 Full Pack | TO-220; SOT3; TO-220 Full Pack | TO-220; TO-220-3 Full Pack | 10V | TO-3 | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||
| PD | 33000 milliwatts | 33000 milliwatts |
