Vishay Precision Group Single FETs, MOSFETs SIHF12N60E-E3

Description
N-Channel 600V 12A (Tc) 33W (Tc) Through Hole TO-220 Full Pack
  • Single FETs, MOSFETs - SIHF12N60E-E3-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHF12N60E-E3 - 028744-SIHF12N60E-E3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SIHF12N60E-E3 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHF12N60E-E3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N Channel, 600V, 12A, To-220-3; Channel Type Vishay - 68W7041 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, N Ch, 600V, 12A, To-220-3, Full Reel; Channel Type Vishay - 68W7042 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-Channel 600V 12A (Tc) 33W (Tc) Through Hole TO-220 Full Pack
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SIHF12N60E-E3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHF12N60E-E3-ND
Single FETs, MOSFETs SIHF12N60E-E3-ND
N-Channel 600V 12A (Tc) 33W (Tc) Through Hole TO-220 Full Pack

N-Channel 600V 12A (Tc) 33W (Tc) Through Hole TO-220 Full Pack

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHF12N60E-E3 - 028744-SIHF12N60E-E3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHF12N60E-E3
028744-SIHF12N60E-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHF12N60E-E3 028744-SIHF12N60E-E3
Manufacturer: Vishay Win Source Part Number: 028744-SIHF12N60E-E3 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 33W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Full Pack Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 58nC @ 10V Max Input Capacitance: 937pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 380 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 028744-SIHF12N60E-E3
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 33W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220 Full Pack
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 58nC @ 10V
Max Input Capacitance: 937pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 380 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - SIHF12N60E-E3 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIHF12N60E-E3
Single FETs, MOSFETs SIHF12N60E-E3
MOSFET N-CH 600V 12A TO220

MOSFET N-CH 600V 12A TO220

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHF12N60E-E3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHF12N60E-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHF12N60E-E3
MOSFET N-CH 600V 12A TO220

MOSFET N-CH 600V 12A TO220

Supplier's Site
Mosfet, N Channel, 600V, 12A, To-220-3; Channel Type Vishay - 68W7041 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 600V, 12A, To-220-3; Channel Type Vishay
68W7041
Mosfet, N Channel, 600V, 12A, To-220-3; Channel Type Vishay 68W7041
MOSFET, N CHANNEL, 600V, 12A, TO-220-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

MOSFET, N CHANNEL, 600V, 12A, TO-220-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

Supplier's Site
Mosfet, N Ch, 600V, 12A, To-220-3, Full Reel; Channel Type Vishay - 68W7042 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 600V, 12A, To-220-3, Full Reel; Channel Type Vishay
68W7042
Mosfet, N Ch, 600V, 12A, To-220-3, Full Reel; Channel Type Vishay 68W7042
MOSFET, N CH, 600V, 12A, TO-220-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

MOSFET, N CH, 600V, 12A, TO-220-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SIHF12N60E-E3
MOSFET SIHF12N60E-E3
MOSFET 600V Vds 30V Vgs TO-220 FULLPAK

MOSFET 600V Vds 30V Vgs TO-220 FULLPAK

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SIHF12N60E-E3-ND 028744-SIHF12N60E-E3 SIHF12N60E-E3 SIHF12N60E-E3 68W7041 68W7042 SIHF12N60E-E3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHF12N60E-E3 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Channel, 600V, 12A, To-220-3; Channel Type Vishay Mosfet, N Ch, 600V, 12A, To-220-3, Full Reel; Channel Type Vishay MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220 Full Pack TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack TO-3; TO-220 TO-3; TO-220
V(BR)DSS 600 volts 600 volts
PD 33000 milliwatts 33000 milliwatts
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