N-Channel 600V 12A (Tc) 33W (Tc) Through Hole TO-220 Full Pack
Manufacturer: Vishay
Win Source Part Number: 028744-SIHF12N60E-E3
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 33W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220 Full Pack
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 58nC @ 10V
Max Input Capacitance: 937pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 380 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Sufficient
600V 12A N-Channel MOSFET TO-220AB 380mR Product overview: SIHF12N60E-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHF12N60E-E3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 12A TO220
MOSFET, N CHANNEL, 600V, 12A, TO-220-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET, N CH, 600V, 12A, TO-220-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET N-CH 600V 12A TO220
MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIHF12N60E-E3-ND | 028744-SIHF12N60E-E3 | 278-SIHF12N60E-E3 | SIHF12N60E-E3 | 68W7041 | 68W7042 | SIHF12N60E-E3 | SIHF12N60E-E3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHF12N60E-E3 | N-Channel 600V 12A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 600V, 12A, To-220-3; Channel Type Vishay | Mosfet, N Ch, 600V, 12A, To-220-3, Full Reel; Channel Type Vishay | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-220; TO-220-3 Full Pack | TO-220; SOT3; TO-220 Full Pack | TO-220; TO-220-3 Full Pack | TO-3; TO-220 | TO-3; TO-220 | TO-220; TO-220-3 Full Pack | ||
| V(BR)DSS | 600 volts | 600 volts | ||||||
| PD | 33000 milliwatts | 33000 milliwatts | 33000 milliwatts |
