Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHF12N60E-E3 SIHF12N60E-E3

Description
Manufacturer: Vishay Win Source Part Number: 028744-SIHF12N60E-E3 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 33W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Full Pack Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 58nC @ 10V Max Input Capacitance: 937pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 380 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHF12N60E-E3 - 028744-SIHF12N60E-E3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SIHF12N60E-E3-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - SIHF12N60E-E3 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Mosfet, N Channel, 600V, 12A, To-220-3; Channel Type Vishay - 68W7041 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, N Ch, 600V, 12A, To-220-3, Full Reel; Channel Type Vishay - 68W7042 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHF12N60E-E3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 028744-SIHF12N60E-E3 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 33W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Full Pack Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 58nC @ 10V Max Input Capacitance: 937pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 380 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHF12N60E-E3 - 028744-SIHF12N60E-E3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHF12N60E-E3
028744-SIHF12N60E-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHF12N60E-E3 028744-SIHF12N60E-E3
Manufacturer: Vishay Win Source Part Number: 028744-SIHF12N60E-E3 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 33W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Full Pack Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 58nC @ 10V Max Input Capacitance: 937pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 380 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 028744-SIHF12N60E-E3
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 33W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220 Full Pack
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 58nC @ 10V
Max Input Capacitance: 937pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 380 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - SIHF12N60E-E3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHF12N60E-E3-ND
Single FETs, MOSFETs SIHF12N60E-E3-ND
N-Channel 600V 12A (Tc) 33W (Tc) Through Hole TO-220 Full Pack

N-Channel 600V 12A (Tc) 33W (Tc) Through Hole TO-220 Full Pack

Buy Now Datasheet
Single FETs, MOSFETs - SIHF12N60E-E3 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIHF12N60E-E3
Single FETs, MOSFETs SIHF12N60E-E3
MOSFET N-CH 600V 12A TO220

MOSFET N-CH 600V 12A TO220

Supplier's Site Datasheet
Mosfet, N Channel, 600V, 12A, To-220-3; Channel Type Vishay - 68W7041 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 600V, 12A, To-220-3; Channel Type Vishay
68W7041
Mosfet, N Channel, 600V, 12A, To-220-3; Channel Type Vishay 68W7041
MOSFET, N CHANNEL, 600V, 12A, TO-220-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

MOSFET, N CHANNEL, 600V, 12A, TO-220-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

Supplier's Site
Mosfet, N Ch, 600V, 12A, To-220-3, Full Reel; Channel Type Vishay - 68W7042 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 600V, 12A, To-220-3, Full Reel; Channel Type Vishay
68W7042
Mosfet, N Ch, 600V, 12A, To-220-3, Full Reel; Channel Type Vishay 68W7042
MOSFET, N CH, 600V, 12A, TO-220-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

MOSFET, N CH, 600V, 12A, TO-220-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SIHF12N60E-E3
MOSFET SIHF12N60E-E3
MOSFET 600V Vds 30V Vgs TO-220 FULLPAK

MOSFET 600V Vds 30V Vgs TO-220 FULLPAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHF12N60E-E3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHF12N60E-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHF12N60E-E3
MOSFET N-CH 600V 12A TO220

MOSFET N-CH 600V 12A TO220

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 028744-SIHF12N60E-E3 SIHF12N60E-E3-ND SIHF12N60E-E3 68W7041 68W7042 SIHF12N60E-E3 SIHF12N60E-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHF12N60E-E3 Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, N Channel, 600V, 12A, To-220-3; Channel Type Vishay Mosfet, N Ch, 600V, 12A, To-220-3, Full Reel; Channel Type Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts 600 volts
PD 33000 milliwatts 33000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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