Manufacturer: Vishay
Win Source Part Number: 1096418-SIHF12N50C-E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 36W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220 Full Pack
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 48nC @ 10V
Max Input Capacitance: 1375pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 555 mOhm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
N-Channel 500V 12A (Tc) 36W (Tc) Through Hole TO-220 Full Pack
MOSFET N-CH 500V 12A TO220
500V 12A 555mΩ@10V,4A 36W 5V@250uA N Channel TO-220 MOSFETs ROHS
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1096418-SIHF12N50C-E3 | SIHF12N50C-E3-ND | SIHF12N50C-E3 | SIHF12N50C-E3 | 17930-SIHF12N50C-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHF12N50C-E3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | 500V 12A 555mΩ@10V,4A 36W 5V@250uA N Channel TO-220 MOSFETs ROHS |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 500 volts | ||||
| PD | 36000 milliwatts |
