The Vishay N-Channel MOSFET, part number SiHF080N60E, features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of 14A at a junction temperature of 150¬8C. It is housed in a TO-220 FullPak package and is RoHS compliant. The device exhibits a low on-state resistance (R_DS(on)) of 0.070Oc at a gate-source voltage (V_GS) of 10V, contributing to reduced conduction losses. This MOSFET is designed for applications including server and telecom power supplies, switch mode power supplies (SMPS), power factor correction (PFC) power supplies, and various industrial applications such as welding and motor drives. It has a maximum power dissipation of 35W and can handle pulsed drain currents up to 96A. The device also features low total gate charge (Q_g) of 63nC, which aids in minimizing switching losses. Thermal resistance ratings indicate a maximum junction-to-ambient thermal resistance (R_thJA) of 65¬8C/W and a junction-to-case thermal resistance (R_thJC) of 3.6¬8C/W. The operating temperature range is from -55¬8C to +150¬8C, making it suitable for a wide variety of environments.
N-Channel 600V 14A (Tc) 35W (Tc) Through Hole TO-220 Full Pack
E SERIES POWER MOSFET TO-220 FUL
MOSFET, N-CH, 600V, 14A, TO-220FP ROHS COMPLIANT: YES
| DigiKey | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 742-SIHF080N60E-GE3-ND | SIHF080N60E-GE3 | 31AJ7237 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 14A, To-220Fp Rohs Compliant Vishay |
| Polarity | N-Channel |
