Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIHF065N60E-GE3

Description
Win Source Part Number: 1010026-SIHF065N60E- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: E Package: Bulk Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 39W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220 Full Pack Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 60 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHF065 Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1010026-SIHF065N60E- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: E Package: Bulk Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 39W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220 Full Pack Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 60 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHF065 Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1010026-SIHF065N60E-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1010026-SIHF065N60E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1010026-SIHF065N60E-GE3
Win Source Part Number: 1010026-SIHF065N60E- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: E Package: Bulk Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 39W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220 Full Pack Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 60 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHF065 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1010026-SIHF065N60E-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: E
Package: Bulk
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 39W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 60 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHF065
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - SIHF065N60E-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHF065N60E-GE3-ND
Single FETs, MOSFETs SIHF065N60E-GE3-ND
N-Channel 600V 40A (Tc) 39W (Tc) Through Hole TO-220 Full Pack

N-Channel 600V 40A (Tc) 39W (Tc) Through Hole TO-220 Full Pack

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 650V Vds; 30V Vgs TO-220

MOSFET 650V Vds; 30V Vgs TO-220

Buy Now Datasheet
Mosfet, N-Ch, 40A, 600V, To-220Fp; Transistor Polarity Vishay - 99AC9555 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 40A, 600V, To-220Fp; Transistor Polarity Vishay
99AC9555
Mosfet, N-Ch, 40A, 600V, To-220Fp; Transistor Polarity Vishay 99AC9555
MOSFET, N-CH, 40A, 600V, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.057ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes

MOSFET, N-CH, 40A, 600V, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.057ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHF065N60E-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHF065N60E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHF065N60E-GE3
MOSFET N-CH 600V 40A TO220

MOSFET N-CH 600V 40A TO220

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1010026-SIHF065N60E-GE3 SIHF065N60E-GE3-ND SIHF065N60E-GE3 99AC9555 SIHF065N60E-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 40A, 600V, To-220Fp; Transistor Polarity Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
PD 39000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3 TO-220; TO-220-3 Full Pack TO-3; TO-220 TO-220; TO-220-3 Full Pack
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