Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIHD9N60E-GE3

Description
Win Source Part Number: 1211934-SIHD9N60E-GE 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: E Package: Tube Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 368mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 78W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 57 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIHD9N60E-GE3CT-ND,S IHD9N60E-GE3TRINACTI VE,SIHD9N60E-GE3DKR, SIHD9N60E-GE3DKR-ND, SIHD9N60E-GE3DKRINAC TIVE,SIHD9N60E-GE3TR ,SIHD9N60E-GE3CT,SIH D9N60E-GE3TR-ND Base Product Number: SIHD9 Drive Voltage (Max Rds On, Min Rds On): 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1211934-SIHD9N60E-GE3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SIHD9N60E-GE3-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHD9N60E-GE3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 9A, 600V, To-252; Transistor Polarity Vishay - 15AC8632 - Newark, An Avnet Company
    Newark, An Avnet Company
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Description
Win Source Part Number: 1211934-SIHD9N60E-GE 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: E Package: Tube Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 368mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 78W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 57 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIHD9N60E-GE3CT-ND,S IHD9N60E-GE3TRINACTI VE,SIHD9N60E-GE3DKR, SIHD9N60E-GE3DKR-ND, SIHD9N60E-GE3DKRINAC TIVE,SIHD9N60E-GE3TR ,SIHD9N60E-GE3CT,SIH D9N60E-GE3TR-ND Base Product Number: SIHD9 Drive Voltage (Max Rds On, Min Rds On): 10V
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Datasheet
Datasheet Summary
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The 1211934-SIHD9N60E-GE3 is an N-Channel MOSFET from Win Source Electronics, designed for various applications including server and telecom power supplies, switch mode power supplies (SMPS), and industrial uses such as motor drives and renewable energy systems. It features a maximum drain-source voltage (Vds) of 600 V and a continuous drain current rating of 9 A at a case temperature of 25 °C. The on-state resistance (Rds(on)) is typically 320 mΩ at a gate-source voltage (Vgs) of 10 V and a drain current of 4.5 A. This MOSFET has a low input capacitance of 778 pF and a maximum gate charge of 52 nC, which contributes to reduced switching and conduction losses. It is avalanche energy rated and operates within a temperature range of -55 °C to +150 °C. The device is packaged in a DPAK (TO-252) format, making it suitable for surface mount applications. The product is lead-free and halogen-free, aligning with modern environmental standards.

Datasheet Summary
Powered by GS/AI

The 1211934-SIHD9N60E-GE3 is an N-Channel MOSFET from Win Source Electronics, designed for various applications including server and telecom power supplies, switch mode power supplies (SMPS), and industrial uses such as motor drives and renewable energy systems. It features a maximum drain-source voltage (Vds) of 600 V and a continuous drain current rating of 9 A at a case temperature of 25 °C. The on-state resistance (Rds(on)) is typically 320 mΩ at a gate-source voltage (Vgs) of 10 V and a drain current of 4.5 A. This MOSFET has a low input capacitance of 778 pF and a maximum gate charge of 52 nC, which contributes to reduced switching and conduction losses. It is avalanche energy rated and operates within a temperature range of -55 °C to +150 °C. The device is packaged in a DPAK (TO-252) format, making it suitable for surface mount applications. The product is lead-free and halogen-free, aligning with modern environmental standards.

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1211934-SIHD9N60E-GE3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1211934-SIHD9N60E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1211934-SIHD9N60E-GE3
Win Source Part Number: 1211934-SIHD9N60E-GE 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: E Package: Tube Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 368mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 78W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 57 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIHD9N60E-GE3CT-ND,S IHD9N60E-GE3TRINACTI VE,SIHD9N60E-GE3DKR, SIHD9N60E-GE3DKR-ND, SIHD9N60E-GE3DKRINAC TIVE,SIHD9N60E-GE3TR ,SIHD9N60E-GE3CT,SIH D9N60E-GE3TR-ND Base Product Number: SIHD9 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1211934-SIHD9N60E-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: E
Package: Tube
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 368mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 78W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 57 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIHD9N60E-GE3CT-ND,SIHD9N60E-GE3TRINACTIVE,SIHD9N60E-GE3DKR,SIHD9N60E-GE3DKR-ND,SIHD9N60E-GE3DKRINACTIVE,SIHD9N60E-GE3TR,SIHD9N60E-GE3CT,SIHD9N60E-GE3TR-ND
Base Product Number: SIHD9
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - SIHD9N60E-GE3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHD9N60E-GE3-ND
Single FETs, MOSFETs SIHD9N60E-GE3-ND
N-Channel 600V 9A (Tc) 78W (Tc) Surface Mount TO-252AA

N-Channel 600V 9A (Tc) 78W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SIHD9N60E-GE3
MOSFET SIHD9N60E-GE3
MOSFET 600V Vds 30V Vgs DPAK (TO-252)

MOSFET 600V Vds 30V Vgs DPAK (TO-252)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHD9N60E-GE3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHD9N60E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHD9N60E-GE3
MOSFET N-CH 600V 9A DPAK

MOSFET N-CH 600V 9A DPAK

Supplier's Site
Mosfet, N-Ch, 9A, 600V, To-252; Transistor Polarity Vishay - 15AC8632 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 9A, 600V, To-252; Transistor Polarity Vishay
15AC8632
Mosfet, N-Ch, 9A, 600V, To-252; Transistor Polarity Vishay 15AC8632
MOSFET, N-CH, 9A, 600V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 9A, 600V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1211934-SIHD9N60E-GE3 SIHD9N60E-GE3-ND SIHD9N60E-GE3 SIHD9N60E-GE3 15AC8632
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 9A, 600V, To-252; Transistor Polarity Vishay
Polarity N-Channel N-Channel
PD 78000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Package Type SOT3; TO-252 (DPAK) TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3
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