The 1211934-SIHD9N60E-GE3 is an N-Channel MOSFET from Win Source Electronics, designed for various applications including server and telecom power supplies, switch mode power supplies (SMPS), and industrial uses such as motor drives and renewable energy systems. It features a maximum drain-source voltage (Vds) of 600 V and a continuous drain current rating of 9 A at a case temperature of 25 ¬8C. The on-state resistance (Rds(on)) is typically 320 mOc at a gate-source voltage (Vgs) of 10 V and a drain current of 4.5 A. This MOSFET has a low input capacitance of 778 pF and a maximum gate charge of 52 nC, which contributes to reduced switching and conduction losses. It is avalanche energy rated and operates within a temperature range of -55 ¬8C to +150 ¬8C. The device is packaged in a DPAK (TO-252) format, making it suitable for surface mount applications. The product is lead-free and halogen-free, aligning with modern environmental standards.
N-Channel 600V 9A (Tc) 78W (Tc) Surface Mount TO-252AA
Win Source Part Number: 1211934-SIHD9N60E-GE
Category: Discrete Semiconductor Products>Transistors
Series: E
Package: Tube
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 368mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 78W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 57 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIHD9N60E-GE3CT-ND,S
Base Product Number: SIHD9
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET 600V Vds 30V Vgs DPAK (TO-252)
MOSFET N-CH 600V 9A DPAK
MOSFET, N-CH, 9A, 600V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation RoHS Compliant: Yes
| DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIHD9N60E-GE3-ND | 1211934-SIHD9N60E-GE3 | SIHD9N60E-GE3 | SIHD9N60E-GE3 | 15AC8632 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 9A, 600V, To-252; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel | |||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK) | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 | |
| PD | 78000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) |
