Trans MOSFET N-CH 800V 5.4A 3-Pin(2+Tab) TO-252AA Product overview: SIHD6N80E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 5.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 5.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHD6N80E-GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 800V 5.4A DPAK
N-Channel 800V 5.4A (Tc) 78W (Tc) Surface Mount TO-252AA
Win Source Part Number: 1277776-SIHD6N80E-GE
Category: Discrete Semiconductor Products>Transistors
Series: E
Package: Bulk
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 47 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHD6
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CHAN 800V TO-252
MOSFET N-CH 800V 5.4A DPAK
MOSFET 800V Vds 30V Vgs DPAK (TO-252)
MOSFET, N-CH, 800V, 5.4A, 150DEG C, 78W; Transistor Polarity:N Channel; Continuous Drain Current Id:5.4A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.82ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIHD6N80E-GE3 | SIHD6N80E-GE3 | SIHD6N80E-GE3-ND | 1277776-SIHD6N80E-GE3 | 880-SIHD6N80E-GE3 | SIHD6N80E-GE3 | SIHD6N80E-GE3 | 78AC6520 |
| Product Name | 800V 5.4A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET N-CHAN 800V TO-252 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 800V, 5.4A, 150Deg C, 78W; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 800 volts | 800 volts | ||||||
| Transconductance | 0.0025 kS | |||||||
| PD | 78 milliwatts | 78000 milliwatts | 78000 milliwatts |
