Manufacturer: Vishay
Win Source Part Number: 1096416-SIHD6N65E-GE
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 78W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-PAK (TO-252AA)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 48nC @ 10V
Max Input Capacitance: 820pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 600 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Sufficient
650V N-Ch MOSFET, 7A, 600mR, DPAK, Surface Mount Power Product overview: SIHD6N65E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 650V, 7A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 650V, 7A, DPAK, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHD6N65E-GE3 can be used for catalog matching and distributor lookup.
N-Channel 650V 7A (Tc) 78W (Tc) Surface Mount TO-252AA
MOSFET 650V Vds 30V Vgs DPAK (TO-252)
Trans MOSFET N-CH 650V 7A 3-Pin(2+Tab) DPAK
MOSFET, N-CH, 650V, 7A, TO-252 ROHS COMPLIANT: YES
MOSFET N-CH 650V 7A DPAK
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1096416-SIHD6N65E-GE3 | 278-SIHD6N65E-GE3 | SIHD6N65E-GE3-ND | SIHD6N65E-GE3 | 880-SIHD6N65E-GE3 | 51AK9381 | SIHD6N65E-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHD6N65E-GE3 | SMD 650V 7A DPAK MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Trans MOSFET N-CH 650V 7A 3-Pin(2+Tab) DPAK | Mosfet, N-Ch, 650V, 7A, To-252 Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 650 volts | 650 volts | |||||
| PD | 78000 milliwatts | 78000 milliwatts | 78000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; TO-252 (DPAK); D-PAK (TO-252AA) | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |
