N-Channel 500V 5.3A (Tc) 104W (Tc) Surface Mount D-Pak
MOSFET N-CH 500V 5.3A TO252AA Product overview: SIHD5N50D-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 5.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 5.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHD5N50D-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1096414-SIHD5N50D-GE
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 104W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 5.3A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 325pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient
MOSFET Transistor, N Channel, 5.3 A, 500 V, 1.2 ohm, 10 V, 3 V RoHS Compliant: Yes
MOSFET, N-CH, 500V, 5.3A, TO-252AA-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:104W RoHS Compliant: Yes
MOSFET N-CH 500V 5.3A TO252AA
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SIHD5N50D-GE3-ND | 278-SIHD5N50D-GE3 | 1096414-SIHD5N50D-GE3 | 63W4107 | 99W9457 | SIHD5N50D-GE3 |
| Product Name | Single FETs, MOSFETs | 500V 5.3A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHD5N50D-GE3 | Mosfet Transistor, N Channel, 5.3 A, 500 V, 1.2 Ohm, 10 V, 3 V Rohs Compliant Vishay | Mosfet, N-Ch, 500V, 5.3A, To-252Aa-3, Full Reel; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | SOT3; TO-252 (DPAK); TO-252AA | TO-3; TO-252 (DPAK) | TO-3 | Surface Mount |
| MOSFET Operating Mode | Enhancement | |||||
| PD | 104 milliwatts | 104000 milliwatts | 104000 milliwatts |
