Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHD5N50D-GE3 SIHD5N50D-GE3

Description
Manufacturer: Vishay Win Source Part Number: 1096414-SIHD5N50D-GE 3 Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 104W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5.3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 325pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHD5N50D-GE3 - 1096414-SIHD5N50D-GE3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SIHD5N50D-GE3-ND - DigiKey
    DigiKey
  • Mosfet Transistor, N Channel, 5.3 A, 500 V, 1.2 Ohm, 10 V, 3 V Rohs Compliant Vishay - 63W4107 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, N-Ch, 500V, 5.3A, To-252Aa-3, Full Reel; Channel Type Vishay - 99W9457 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHD5N50D-GE3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 1096414-SIHD5N50D-GE 3 Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 104W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5.3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 325pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHD5N50D-GE3 - 1096414-SIHD5N50D-GE3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHD5N50D-GE3
1096414-SIHD5N50D-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHD5N50D-GE3 1096414-SIHD5N50D-GE3
Manufacturer: Vishay Win Source Part Number: 1096414-SIHD5N50D-GE 3 Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 104W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5.3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 325pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1096414-SIHD5N50D-GE3
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 104W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 5.3A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 325pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - SIHD5N50D-GE3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHD5N50D-GE3-ND
Single FETs, MOSFETs SIHD5N50D-GE3-ND
N-Channel 500V 5.3A (Tc) 104W (Tc) Surface Mount D-Pak

N-Channel 500V 5.3A (Tc) 104W (Tc) Surface Mount D-Pak

Buy Now Datasheet
Mosfet Transistor, N Channel, 5.3 A, 500 V, 1.2 Ohm, 10 V, 3 V Rohs Compliant Vishay - 63W4107 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 5.3 A, 500 V, 1.2 Ohm, 10 V, 3 V Rohs Compliant Vishay
63W4107
Mosfet Transistor, N Channel, 5.3 A, 500 V, 1.2 Ohm, 10 V, 3 V Rohs Compliant Vishay 63W4107
MOSFET Transistor, N Channel, 5.3 A, 500 V, 1.2 ohm, 10 V, 3 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 5.3 A, 500 V, 1.2 ohm, 10 V, 3 V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N-Ch, 500V, 5.3A, To-252Aa-3, Full Reel; Channel Type Vishay - 99W9457 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 500V, 5.3A, To-252Aa-3, Full Reel; Channel Type Vishay
99W9457
Mosfet, N-Ch, 500V, 5.3A, To-252Aa-3, Full Reel; Channel Type Vishay 99W9457
MOSFET, N-CH, 500V, 5.3A, TO-252AA-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:104W RoHS Compliant: Yes

MOSFET, N-CH, 500V, 5.3A, TO-252AA-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:104W RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHD5N50D-GE3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHD5N50D-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHD5N50D-GE3
MOSFET N-CH 500V 5.3A TO252AA

MOSFET N-CH 500V 5.3A TO252AA

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1096414-SIHD5N50D-GE3 SIHD5N50D-GE3-ND 63W4107 99W9457 SIHD5N50D-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHD5N50D-GE3 Single FETs, MOSFETs Mosfet Transistor, N Channel, 5.3 A, 500 V, 1.2 Ohm, 10 V, 3 V Rohs Compliant Vishay Mosfet, N-Ch, 500V, 5.3A, To-252Aa-3, Full Reel; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 500 volts
PD 104000 milliwatts 104000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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