Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIHD5N50D-E3

Description
Win Source Part Number: 1277885-SIHD5N50D-E3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 75 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 104W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 59 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIHD5N50D-E3DKR,SIHD 5N50D-E3DKRINACTIVE, SIHD5N50D-E3DKR,SIHD 5N50D-E3TRINACTIVE,S IHD5N50D-E3CT,SIHD5N 50D-E3CT,SIHD5N50D-E 3TR,SIHD5N50D-E3TR Base Product Number: SIHD5 Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1277885-SIHD5N50D-E3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 75 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 104W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 59 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIHD5N50D-E3DKR,SIHD 5N50D-E3DKRINACTIVE, SIHD5N50D-E3DKR,SIHD 5N50D-E3TRINACTIVE,S IHD5N50D-E3CT,SIHD5N 50D-E3CT,SIHD5N50D-E 3TR,SIHD5N50D-E3TR Base Product Number: SIHD5 Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277885-SIHD5N50D-E3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277885-SIHD5N50D-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277885-SIHD5N50D-E3
Win Source Part Number: 1277885-SIHD5N50D-E3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 75 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 104W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 59 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIHD5N50D-E3DKR,SIHD 5N50D-E3DKRINACTIVE, SIHD5N50D-E3DKR,SIHD 5N50D-E3TRINACTIVE,S IHD5N50D-E3CT,SIHD5N 50D-E3CT,SIHD5N50D-E 3TR,SIHD5N50D-E3TR Base Product Number: SIHD5 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1277885-SIHD5N50D-E3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 75
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 104W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIHD5N50D-E3DKR,SIHD5N50D-E3DKRINACTIVE,SIHD5N50D-E3DKR,SIHD5N50D-E3TRINACTIVE,SIHD5N50D-E3CT,SIHD5N50D-E3CT,SIHD5N50D-E3TR,SIHD5N50D-E3TR
Base Product Number: SIHD5
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - SIHD5N50D-E3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHD5N50D-E3-ND
Single FETs, MOSFETs SIHD5N50D-E3-ND
N-Channel 500V 5.3A (Tc) 104W (Tc) Surface Mount TO-252AA

N-Channel 500V 5.3A (Tc) 104W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Mosfet, N-Ch, 500V, 5.3A, To-252Aa-3, Full Reel; Channel Type Vishay - 99W9456 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 500V, 5.3A, To-252Aa-3, Full Reel; Channel Type Vishay
99W9456
Mosfet, N-Ch, 500V, 5.3A, To-252Aa-3, Full Reel; Channel Type Vishay 99W9456
MOSFET, N-CH, 500V, 5.3A, TO-252AA-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:104W RoHS Compliant: Yes

MOSFET, N-CH, 500V, 5.3A, TO-252AA-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:104W RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N Channel, 500V, 5.3A, To-252Aa-3; Channel Type Vishay - 08X3790 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 500V, 5.3A, To-252Aa-3; Channel Type Vishay
08X3790
Mosfet, N Channel, 500V, 5.3A, To-252Aa-3; Channel Type Vishay 08X3790
MOSFET, N CHANNEL, 500V, 5.3A, TO-252AA-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

MOSFET, N CHANNEL, 500V, 5.3A, TO-252AA-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 500V Vds 30V Vgs DPAK (TO-252)

MOSFET 500V Vds 30V Vgs DPAK (TO-252)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHD5N50D-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHD5N50D-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHD5N50D-E3
MOSFET N-CH 500V 5.3A DPAK

MOSFET N-CH 500V 5.3A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1277885-SIHD5N50D-E3 SIHD5N50D-E3-ND 99W9456 08X3790 SIHD5N50D-E3 SIHD5N50D-E3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Mosfet, N-Ch, 500V, 5.3A, To-252Aa-3, Full Reel; Channel Type Vishay Mosfet, N Channel, 500V, 5.3A, To-252Aa-3; Channel Type Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel
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