N-Channel 500V 5.3A (Tc) 104W (Tc) Surface Mount TO-252AA
MOSFET N-CH 500V 5.3A DPAK Product overview: SIHD5N50D-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 5.3A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 5.3A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHD5N50D-E3 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1277885-SIHD5N50D-E3
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 75
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 104W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIHD5N50D-E3DKR,SIHD
Base Product Number: SIHD5
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET 500V Vds 30V Vgs DPAK (TO-252)
MOSFET N-CH 500V 5.3A DPAK
MOSFET, N-CH, 500V, 5.3A, TO-252AA-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:104W RoHS Compliant: Yes
MOSFET, N CHANNEL, 500V, 5.3A, TO-252AA-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIHD5N50D-E3-ND | 278-SIHD5N50D-E3 | 1277885-SIHD5N50D-E3 | SIHD5N50D-E3 | SIHD5N50D-E3 | 99W9456 | 08X3790 |
| Product Name | Single FETs, MOSFETs | 500V 5.3A DPAK MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 500V, 5.3A, To-252Aa-3, Full Reel; Channel Type Vishay | Mosfet, N Channel, 500V, 5.3A, To-252Aa-3; Channel Type Vishay |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | |||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | SOT3; TO-252 (DPAK) | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 | TO-3 | |
| MOSFET Operating Mode | Enhancement | ||||||
| PD | 104 milliwatts | 104000 milliwatts |
