MOSFET N-CH 500V 3A TO252AA Product overview: SIHD3N50D-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHD3N50D-GE3 can be used for catalog matching and distributor lookup.
N-Channel 500V 3A (Tc) 69W (Tc) Surface Mount D-Pak
Manufacturer: Vishay
Win Source Part Number: 1096413-SIHD3N50D-GE
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 69W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 3A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 175pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3.2 Ohm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 500V 3A TO252AA
MOSFET 500V Vds 30V Vgs DPAK (TO-252)
MOSFET, N-CH, 500V, 3A, TO-252AA-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET, N CHANNEL, 500V, 3A, TO-252AA-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIHD3N50D-GE3 | SIHD3N50D-GE3-ND | 1096413-SIHD3N50D-GE3 | SIHD3N50D-GE3 | SIHD3N50D-GE3 | 99W9455 | 08X3789 |
| Product Name | 500V 3A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHD3N50D-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 500V, 3A, To-252Aa-3, Full Reel; Channel Type Vishay | Mosfet, N Channel, 500V, 3A, To-252Aa-3; Channel Type Vishay |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| PD | 69 milliwatts | 69000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
