Win Source Part Number: 1146355-SIHD3N50D-E3
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 75
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 69W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHD3
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 500V 3A DPAK Product overview: SIHD3N50D-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 3A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 3A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHD3N50D-E3 can be used for catalog matching and distributor lookup.
N-Channel 500V 3A (Tc) 69W (Tc) Surface Mount TO-252AA
MOSFET N-CH 500V 3A DPAK
MOSFET, N CHANNEL, 500V, 3A, TO-252AA-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET, N CHANNEL, 500V, 3A, TO-252AA-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:104W RoHS Compliant: Yes
MOSFET 500V Vds 30V Vgs DPAK (TO-252)
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1146355-SIHD3N50D-E3 | 278-SIHD3N50D-E3 | SIHD3N50D-E3-ND | SIHD3N50D-E3 | 08X3788 | 99W9454 | SIHD3N50D-E3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 500V 3A DPAK MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 500V, 3A, To-252Aa-3; Channel Type Vishay | Mosfet, N Channel, 500V, 3A, To-252Aa-3, Full Reel; Channel Type Vishay | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| PD | 69000 milliwatts | 69 milliwatts | 104000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; TO-252 (DPAK) | Tube | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 | TO-3 |