Trans MOSFET N-CH 800V 2.8A 3-Pin(2+Tab) TO-252AA Product overview: SIHD2N80E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 2.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 2.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHD2N80E-GE3 can be used for catalog matching and distributor lookup.
Win Source Part Number: 976541-SIHD2N80E-GE3
Category: Discrete Semiconductor Products>Transistors
Series: E
Package: Tube
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 48 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIHD2N80E-GE3CT,SIHD
Base Product Number: SIHD2
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 800V 2.8A (Tc) 62.5W (Tc) Surface Mount TO-252AA
MOSFET N-CH 800V 2.8A DPAK
MOSFET 800V Vds 30V Vgs DPAK (TO-252)
MOSFET N-CH 800V 2.8A DPAK
MOSFET, N-CH, 800V, 2.8A, 150DEG C; Transistor Polarity:N Channel; Continuous Drain Current Id:2.8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.38ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIHD2N80E-GE3 | 976541-SIHD2N80E-GE3 | SIHD2N80E-GE3-ND | SIHD2N80E-GE3 | SIHD2N80E-GE3 | SIHD2N80E-GE3 | 78AC6518 |
| Product Name | 800V 2.8A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 800V, 2.8A, 150Deg C; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 800 volts | 800 volts | |||||
| PD | 62.5 milliwatts | 62500 milliwatts | 62500 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
