Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHD2N80AE-T5-GE3

The SiHD2N80AE is an N-channel MOSFET in a DPAK (TO-252) package designed for high-efficiency switch-mode power supplies, PFC circuits, and industrial applications. It features a drain-source voltage rating of 800 V, a drain-source on-state resistance of 2.5 Ω at 25 °C and 10 V gate-source voltage, and a maximum gate charge of 10.5 nC. The device includes integrated Zener diode ESD protection and is rated for 14.1 mJ single-pulse avalanche energy. Its continuous drain current is 2.9 A at 25 °C and 1.8 A at 150 °C, with a power dissipation of 62.5 W. The package has a maximum junction-to-case thermal resistance of 2.0 °C/W. The operating junction and storage temperature range is -55 to +150 °C.