Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHD2N80AE-T4-GE3

The SiHD2N80AE is an N-channel MOSFET designed for switch mode power supplies, power factor correction, and industrial applications such as motor drives and renewable energy systems. It is packaged in a DPAK (TO-252) case with dimensions of 6.35 to 6.73 mm in width, 9.40 to 10.41 mm in height, and 5.97 to 6.22 mm in length. The device has a drain-source voltage rating of 800 V, a maximum continuous drain current of 2.9 A at 25 °C, and a typical on-state resistance of 2.5 Ω at 10 V gate-source voltage. It features a total gate charge of 10.5 nC, integrated Zener diode ESD protection, and is rated for single pulse avalanche energy of 14.1 mJ. The MOSFET operates with a junction and storage temperature range of -55 °C to +150 °C and meets RoHS compliance with lead-free and halogen-free construction.