Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHD2N80AE-T1-GE3

The SiHD2N80AE is an N-channel MOSFET in a DPAK (TO-252) package designed for high-efficiency switch-mode power supplies, server and telecom power systems, and renewable energy applications. It features an 800 V drain-source breakdown voltage, a maximum on-state resistance of 2.9 Ω at 25 °C, a total gate charge of 10.5 nC, and a continuous drain current of 2.9 A at 25 °C. The device includes an integrated Zener diode for ESD protection and is rated for 14.1 mJ single-pulse avalanche energy. Operating junction and storage temperatures range from -55 °C to +150 °C, with a maximum power dissipation of 62.5 W and a thermal resistance of 2.0 °C/W junction-to-case.