E Series Power MOSFET DPAK (TO-252)
E Series Power MOSFET DPAK (TO-252)
E Series Power MOSFET DPAK (TO-252)
Win Source Part Number: 1277721-SIHD2N80AE-G
Category: Discrete Semiconductor Products>Transistors
Series: E
Package: Tube
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 77 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHD2
Drive Voltage (Max Rds On, Min Rds On): 10V
Trans MOSFET N-CH 800V 2.9A 3-Pin(2+Tab) DPAK T/R Product overview: SIHD2N80AE-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 2.9A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 2.9A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHD2N80AE-GE3 can be used for catalog matching and distributor lookup.
N-Channel 800V 2.9A (Tc) 62.5W (Tc) Surface Mount TO-252AA
MOSFET Nch 800V Vds 30V Vgs TO-252 (DPAK)
MOSFET N-CH 800V 2.9A DPAK
MOSFET, N-CH, 800V, 2.9A, 150DEG C; Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
| RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1884982 | 1884982P | 1277721-SIHD2N80AE-GE3 | 278-SIHD2N80AE-GE3 | 742-SIHD2N80AE-GE3-ND | SIHD2N80AE-GE3 | SIHD2N80AE-GE3 | 39AH9244 |
| Product Name | MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 800V 2.9A DPAK MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 800V, 2.9A, 150Deg C; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel | N-Channel | |||||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||
| Package Type | TO-252 (DPAK); Dpak (to-252) | TO-252 (DPAK); TO-252 | SOT3; TO-252 (DPAK) | Tape and Reel | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 | |
| Number of units in IC | 1 | |||||||
| V(BR)DSS | 800 volts |
