Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHD240N60E-T5-GE3

The SiHD240N60E is an N-channel MOSFET designed for power supply and industrial applications, featuring a 600 V drain-source voltage rating, a typical on-state resistance of 0.208 Ω at 25 °C and 10 V gate-source voltage, and a maximum continuous drain current of 12 A at 25 °C. It is packaged in a DPAK (TO-252) case with dimensions of 6.22 mm maximum length, 6.73 mm maximum width, and 10.41 mm maximum height. The device has an avalanche energy rating of 81 mJ, a thermal resistance from junction-to-case of 1.6 °C/W, and operates over a junction and storage temperature range of -55 to +150 °C. It meets RoHS and halogen-free requirements and is rated for unclamped inductive switching. The part is suitable for server, telecom, and PFC power supplies, as well as welding and motor drives.